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KRC282M

(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

KRC282M Features

* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANS

KRC282M Datasheet (380.84 KB)

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Datasheet Details

Part number:

KRC282M

Manufacturer:

Korea Electronics

File Size:

380.84 KB

Description:

(krc281m - krc286m) epitaxial planar npn transistor.

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KRC282M KRC281M KRC286M EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics

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