KRC285M Features
* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANS
Datasheet Details
KRC285M, KRC281M
Korea Electronics
380.84 KB
(krc281m - krc286m) epitaxial planar npn transistor.
This datasheet PDF includes multiple part numbers: KRC285M, KRC281M.
Please refer to the document for exact specifications by model.
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KRC285M Distributor
