FCH08A06
Kyocera
746.39kb
Schottky barrier diode.
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📁 Related Datasheet
FCH08A03L - Schottky Barrier Diode
(Nihon Inter Electronics)
.DataSheet.co.kr
SBD
T y p e : FCH08A03L
OUTLINE DRAWING
FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cat.
FCH08A04 - Schottky Barrier Diode
(Nihon Inter Electronics)
.DataSheet.co.kr
SBD
T y p e : FCH08A04 FCH08A04
OUTLINE DRAWING
FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diod.
FCH08A06 - Schottky Barrier Diode
(Nihon Inter Electronics)
.DataSheet.co.kr
SBD
T y p e : FCH08A06 FCH08A06
OUTLINE DRAWING
FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diod.
FCH08A10 - Schottky Barrier Diode
(Kyocera)
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FCH08A10 - Schottky Barrier Diode
(Nihon Inter Electronics)
.DataSheet.co.kr
SBD
T y p e : FCH08A10 FCH08A10
OUTLINE DRAWING
FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cath.
FCH08A15 - Schottky Barrier Diode
(Kyocera)
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FCH08A15 - SBD
(Nihon Inter Electronics)
8A Avg.
150 Volts
SBD
FCH08A15
0˚
180˚
θ
FORWARD CURRENT VS. VOLTAGE
20 FCH08A15 (per Arm)
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION.
FCH08U10 - SBD
(Nihon Inter Electronics)
8A Avg. 100 Volts SBD
FCH08U10
.
FCH023N65S3 - N-Channel MOSFET
(ON Semiconductor)
FCH023N65S3
MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive
650 V, 75 A, 23 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi.
FCH040N65S3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FCH040N65S3
·FEATURES ·With TO-247 packaging ·Drain Source Voltage-
: VDSS ≥ 650V ·Static drain-source on-resistance.
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