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MD56V62160E SYNCHRONOUS DYNAMIC RAM

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Description

MD56V62160E 4-Bank  1,048,576-Word  16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov.18, 2013 .
The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology.

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Datasheet Specifications

Part number
MD56V62160E
Manufacturer
LAPIS
File Size
422.68 KB
Datasheet
MD56V62160E-LAPIS.pdf
Description
SYNCHRONOUS DYNAMIC RAM

Features

* Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
* 4-Bank  1,048,576-word  16-bit configuration
* Single 3.3 V power supply, 0.3 V tolerances
* Input : LVTTL compatible
* Output : LVTTL compatible
* Refresh : 4096 cycles/64 ms

MD56V62160E Distributors

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SYNCHRONOUS DYNAMIC RAM LAPIS
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