* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank
* 1,048,576-word
* 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycl
MD56V62160 Datasheet (305.92 KB)
MD56V62160
OKI electronic componets
305.92 KB
4-bank x 1 /048 /576-word x 16-bit synchronous dynamic ram.
E2G1052-17-X1
¡ Semiconductor MD56V62160/H
¡ Semiconductor
This version: Mar. 1998 MD56V62160/H
Pr el im in ar y
4-Bank
* 1,048,576-Word
*.
📁 Related Datasheet
MD56V62160E SYNCHRONOUS DYNAMIC RAM (LAPIS)
MD56V62160H 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MD56V62160M-10TA SYNCHRONOUS DYNAMIC RAM (LAPIS)
MD56V62160M-75TA SYNCHRONOUS DYNAMIC RAM (LAPIS)
MD56V62160M-7TA SYNCHRONOUS DYNAMIC RAM (LAPIS)
MD56V62320 4-Bank x 524 /288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MD56V62400 4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MD56V62400H 4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MD56V62800A 4-Bank x 2 /097 /152-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MD56V72161C-10TA SYNCHRONOUS DYNAMIC RAM (LAPIS)
TAGS
Image Gallery
