* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank
* 4,194,304-word
* 4-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycle
MD56V62400 Datasheet (303.20 KB)
MD56V62400
OKI electronic componets
303.20 KB
4-bank x 4 /194 /304-word x 4-bit synchronous dynamic ram.
E2G1050-17-X1
¡ Semiconductor MD56V62400/H
¡ Semiconductor
This version: Mar. 1998 MD56V62400/H
Pr el im in ar y
4-Bank
* 4,194,304-Word
*.
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