* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank
* 1,048,576-word
* 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycl
MD56V62160H Datasheet (305.92 KB)
MD56V62160H
OKI electronic componets
305.92 KB
4-bank x 1 /048 /576-word x 16-bit synchronous dynamic ram.
E2G1052-17-X1
¡ Semiconductor MD56V62160/H
¡ Semiconductor
This version: Mar. 1998 MD56V62160/H
Pr el im in ar y
4-Bank
* 1,048,576-Word
*.
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