LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Applications
Datasheet Details
LMN3660EX5F, LMN3660EX7F
LFC semi
675.86 KB
30v n-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: LMN3660EX5F, LMN3660EX7F.
Please refer to the document for exact specifications by model.
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