LMP3117XF
Features
- -30V/-42A, RDS(ON)=14.5mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- Green Device Available
- DFN5X6-8L package design
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications..
Applications
- MB / VGA / Vcore
- POL Applications
- Load Switch
- LED Application
Pin Configuration
LMP3117XF (DFN5X6-8L)
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP3117XF
P/N LMP3117
Rev....
