GM72V66841ET
LG Semicon
414.76kb
2m x 8-bit x 4 bank sdram.
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GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM
(Hynix Semiconductor)
Description
The GM72V66841ET/ELT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic including input and outp.
GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM
(LG Semicon)
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GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM
(Hynix Semiconductor)
Description
The GM72V66841ET/ELT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic including input and outp.
GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM
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GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM
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GM72V66841ET/ELT
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
Description
The GM72V66841ET/ELT is a synchronous dynamic random access memo.
GM72V66841CLT - 2M x 8-Bit x 4 Bank SDRAM
(LG Semicon)
LG Semicon Co.,Ltd.
Description
The GM72V66841CT/CLT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic incl.
GM72V66841CT - 2M x 8-Bit x 4 Bank SDRAM
(LG Semicon)
LG Semicon Co.,Ltd.
Description
The GM72V66841CT/CLT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic incl.
GM72V661641D - 1M word x 16-Bit x 4 Bank SDRAM
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GM72V661641DI - 1M word x 16-Bit x 4 Bank SDRAM
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