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2SA1700 PNP Transistor

2SA1700 Description

1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 .

2SA1700 Features

* High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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Datasheet Details

Part number
2SA1700
Manufacturer
LGE
File Size
202.54 KB
Datasheet
2SA1700-LGE.pdf
Description
PNP Transistor

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PNP Transistor LGE
LGE 2SA1700-like datasheet