* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTBG12GPWT1G Datasheet (391.21 KB)
LDTBG12GPWT1G
LRC
391.21 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTBG12GPWT1G
zAppl.
📁 Related Datasheet
LDTBG12GPWT3G Bias Resistor Transistor (LRC)
LDTBG12GPLT1G Bias Resistor Transistor (Leshan Radio Company)
LDTBG12GPLT3G Bias Resistor Transistor (Leshan Radio Company)
LDTBG12GPT1G Bias Resistor Transistor (LRC)
LDTBG12GPT3G Bias Resistor Transistor (LRC)
LDTB113EET1G Bias Resistor Transistor (LRC)
LDTB113EET3G Bias Resistor Transistor (LRC)
LDTB113ELT1G Bias Resistor Transistor (Leshan Radio Company)
LDTB113ELT3G Bias Resistor Transistor (Leshan Radio Company)
LDTB113EWT1G Bias Resistor Transistor (LRC)
