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LDTBG12GPLT3G, LDTBG12GPLT1G Bias Resistor Transistor

LDTBG12GPLT3G Description

LESHAN RADIO COMPANY, LTD.Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zAppl.

LDTBG12GPLT3G Features

* 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
LDTBG12GPLT3G, LDTBG12GPLT1G
Manufacturer
Leshan Radio Company
File Size
321.69 KB
Datasheet
LDTBG12GPLT1G-LeshanRadioCompany.pdf
Description
Bias Resistor Transistor
Note
This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G.
Please refer to the document for exact specifications by model.

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