LDTBG12GPLT3G, LDTBG12GPLT1G Datasheet - Leshan Radio Company

LDTBG12GPLT3G Bias Resistor Transistor

LDTBG12GPLT3G Features

* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).

* We declare that the material of product compliance with RoHS requirements. z

LDTBG12GPLT1G-LeshanRadioCompany.pdf

LDTBG12GPLT3G Datasheet Preview — This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

LDTBG12GPLT3G, LDTBG12GPLT1G

Manufacturer:

Leshan Radio Company

File Size:

321.69 KB

Description:

Bias resistor transistor.

Note:

This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G.
Please refer to the document for exact specifications by model.

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