* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTBG12GPLT3G Datasheet (321.69 KB)
LDTBG12GPLT3G
Leshan Radio Company
321.69 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTBG12GPLT1G
zAppl.
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