LDTBG12GPLT1G Datasheet, Transistor, Leshan Radio Company

LDTBG12GPLT1G Features

• Transistor 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L

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LDTBG12GPLT1G

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Leshan Radio Company

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📄 Datasheet

Description:

Bias resistor transistor.

LDTBG12GPLT1G Application

• Applications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Bui

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LDTBG12GPLT1G

Leshan Radio Company

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