* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package O
LP9435LT1G Datasheet (403.06 KB)
LP9435LT1G
LRC
403.06 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ.
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