* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package O
S-LP9435LT1G Datasheet (403.06 KB)
S-LP9435LT1G
LRC
403.06 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ.
📁 Related Datasheet
S-LP2301ALT1G P-Channel MOSFET (LRC)
S-LP2305DSLT1G P-Channel MOSFET (LRC)
S-LP3401LT1G P-Channel MOSFET (LRC)
S-LP3407LT1G P-Channel MOSFET (LRC)
S-LP3415ELT1G P-Channel MOSFET (LRC)
S-L1SS360TT1G Monolithic Dual Switching Diode (LRC)
S-L1SS400CST5G Switching diode (Leshan Radio Company)
S-L1SS400T1G Switching Diode (Leshan Radio Company)
S-L2980 CMOS VOLTAGE REGULATOR (ABLIC)
S-L2980 High Ripple Rejection Low Dropout CMOS Voltage Regulator (Seiko Instruments)
