S-LP3401LT1G - P-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G S-LP3401LT1G
VDS (V) = -30V
RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ .
S-LP3415ELT1G - P-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RD.
S-LP2301ALT1G - P-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density.
S-LP2305DSLT1G - P-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V RDS(ON), Vgs@-4.5V, Ids@ 3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@ 3A = 81 mΩ RD.
S-LP9435LT1G - P-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ.
S-L1SS360TT1G - Monolithic Dual Switching Diode
(LRC)
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
FEATURES
z We declare that the material of product pliance with
RoHS re.