CS830F - N-CHANNEL MOSFET

LZG

Datasheet Details

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.5A gFS VDS=40V ID=2.5A VSD V.

📁 CS830F Similar Datasheet

CS830FA9RD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS830 - VDMOS Transistors (ETC)
CS8302 - Filter-Free Class-D Audio Amplifier (ChipSourceTek)
CS8302M - Filter-Free Class-D Audio Amplifier (ChipSourceTek)
CS8305E - 5.0W mono / ultra-low EMI / filterless Class-D audio amplifier (Chipstar Micro-electronics)
CS830A3RD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS830A4RD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS830A8RD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)

Other Datasheets by LZG

Published: Jul 9, 2017 |