* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 8.0 A ID(Tc=100℃) 5.1 A IDM 32 A VGSS ±30 V IAR 8 A EAS 320 mJ EAR 13.4 mJ PD(Tc=25℃) 44 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
CS840F
LZG
181.86 KB
N-channel mosfet.
IRFS840(CS840F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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