CS830 - N-Channel MOSFET

LZG

Datasheet Details

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 5.0 3.0 20 ±30 5 292 8.75 87.5 -55 to 150 V A A A V A mJ mJ W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=500V VGS=0V IDSS VDS=400V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf VGS=10V VDS=40V VGS=0V ID=2.5A ID=2.5A I.

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Published: May 5, 2014 |