CS830FA9RD Datasheet - Huajing Microelectronics

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CS830FA9RD Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS830F A9RD ○R General .
CS830F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Details

Part number:

CS830FA9RD

Manufacturer:

Huajing Microelectronics

File Size:

247.82 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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CS830FA9RD Silicon N-Channel Power MOSFET Huajing Microelectronics

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