CS840A8D Datasheet - Huajing Microelectronics

CS840A8D Silicon N-Channel Power MOSFET

CS840 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 500 7 100 0.68 switching performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS840A8D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS840A8D-HuajingMicroelectronics.pdf