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CS840FA9H Datasheet - Huajing Microelectronics

CS840FA9H Silicon N-Channel Power MOSFET

CS840F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 8 45 0.57 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS840FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS840FA9H Datasheet (345.72 KB)

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Datasheet Details

Part number:

CS840FA9H

Manufacturer:

Huajing Microelectronics

File Size:

345.72 KB

Description:

Silicon n-channel power mosfet.

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Stock and price

part
Rochester Electronics LLC
AD9618JR-REEL
2500 In Stock
Qty : 48 units
Unit Price : $6.38

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CS840FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

CS840FA9H Distributor