LMUN5111DW1T1G Datasheet - Leshan Radio Company

LMUN5111DW1T1G Dual Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a s.

LMUN5111DW1T1G Features

* com 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current 6/12 LESHAN RADIO COMPANY, LTD. LMUN5111DW1T1G TYPICAL ELECTRICAL CHARACTERISTICS

* LMUN5113DW1T1G V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 0.1 h FE , DC CURRENT GAIN (NOR

LMUN5111DW1T1G_LeshanRadioCompany.pdf