* 5211DW1T1G Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS
* LMUN5212DW1T1 10 1000 1 100 0.1 C ob CAPACITANCE (pF) 0.01 0 4 20 40 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 10 50 1 100 10 I
LMUN5212DW1T3G Datasheet (186.13 KB)
LMUN5212DW1T3G
Leshan Radio Company
186.13 KB
Dual bias resistortransistors.
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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