LMUN5216T1G Datasheet - Leshan Radio Company

LMUN5216T1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them int.

LMUN5216T1G Features

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* LMUN5213T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TAĂ=Ă75°C 25°C -25°C 1 TAĂ=Ă-25°C 0.1 25°C 75°C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) ver

LMUN5216T1G Datasheet (160.67 KB)