* 5211DW1T1G Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS
* LMUN5212DW1T1 10 1000 1 100 0.1 C ob CAPACITANCE (pF) 0.01 0 4 20 40 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 10 50 1 100 10 I
LMUN5230DW1T3G Datasheet (186.13 KB)
LMUN5230DW1T3G
Leshan Radio Company
186.13 KB
Dual bias resistortransistors.
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Re.
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