LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a si
LMUN5230DW1T3G Features
* 5211DW1T1G Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS
* LMUN5212DW1T1 10 1000 1 100 0.1 C ob CAPACITANCE (pF) 0.01 0 4 20 40 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 10 50 1 100 10 I
LMUN5211DW1T1G-LeshanRadioCompany.pdf
Datasheet Details
LMUN5230DW1T3G, LMUN5211DW1T1G
Leshan Radio Company
186.13 KB
Dual bias resistortransistors.
This datasheet PDF includes multiple part numbers: LMUN5230DW1T3G, LMUN5211DW1T1G.
Please refer to the document for exact specifications by model.
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