LP2301LT1G - 20V P-Channel Enhancement-Mode MOSFET

Leshan Radio Company

Datasheet Details

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT.
23 (TO.
236AB) ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 D G 1 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.

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Published: Apr 13, 2011 |