* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT
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* 236AB) ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is
LP2301LT1G Datasheet (672.10 KB)
LP2301LT1G
Leshan Radio Company
672.10 KB
20v p-channel enhancement-mode mosfet.
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 .
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