* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other Applications Requiring U
LP2305DSLT1G Datasheet (303.85 KB)
LP2305DSLT1G
LRC
303.85 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V RDS(ON), Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RD.
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