* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface
LP2301BLT1G Datasheet (513.16 KB)
LP2301BLT1G
LRC
513.16 KB
P-channel mosfet.
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150.
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