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LP2307LT3G, LP2307LT1G 16V P-Channel Enhancement-Mode MOSFET

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Description

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 .

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This datasheet PDF includes multiple part numbers: LP2307LT3G, LP2307LT1G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
LP2307LT3G, LP2307LT1G
Manufacturer
LRC
File Size
278.26 KB
Datasheet
LP2307LT1G-LRC.pdf
Description
16V P-Channel Enhancement-Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: LP2307LT3G, LP2307LT1G.
Please refer to the document for exact specifications by model.

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT
* 23 (TO
* 236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000/Tape&Ree

LP2307LT3G Distributors

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LRC LP2307LT3G-like datasheet