LP2307LT1G 16V P-Channel Enhancement-Mode MOSFET

LRC

Description

LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 .

📥 Download Datasheet

LP2307LT1G Datasheet Preview — Preview of LP2307LT1G PDF

Datasheet Specifications

Part number: LP2307LT1G
Manufacturer: LRC
File Size: 278.26 KB
Datasheet: LP2307LT1G-LRC.pdf
Description: 16V P-Channel Enhancement-Mode MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT
* 23 (TO
* 236AB) D G S ORDERING INFORMATION Device Marking Shipping LP2307LT1G P07 3000/Tape&Ree

LP2307LT1G Distributors

📁 Related Datasheet

LP230-10 LP230-100 LP230-200 LP230-25 LP230-50 LP2301LT1G

📌 All Tags

LP2307LT1G 16V P-Channel Enhancement-Mode MOSFET LRC

LRC LP2307LT1G-like datasheet