* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ORDERING INFORMATION D Device LP2305LT1G LP2305LT3G Marking P05 P05 Shipping 3000/Tape&Reel 10000/Tape&Reel G S MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) o Parameter D
LP2305LT1G Datasheet (381.00 KB)
LP2305LT1G
Leshan Radio Company
381.00 KB
30v p-channel mosfet.
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ .
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