LTE-4206, LTE-4206_Lite GaAlAs T-1 Standard 3 Infrared Emitting Diode

Lite-On Technology

Description

GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C .
The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.

📥 Download Datasheet

LTE-4206 Datasheet Preview — This datasheet PDF includes multiple part numbers: LTE-4206, LTE-4206_Lite. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: LTE-4206, LTE-4206_Lite
Manufacturer: Lite-On Technology
File Size: 297.61 KB
Datasheet: LTE-4206_Lite-OnTechnology.pdf
Description: GaAlAs T-1 Standard 3 Infrared Emitting Diode
Note: This datasheet PDF includes multiple part numbers: LTE-4206, LTE-4206_Lite.
Please refer to the document for exact specifications by model.

Features

* Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting dio

LTE-4206 Distributors

📁 Related Datasheet

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LTE-4206_Lite GaAlAs T-1 Standard Infrared Emitting Diode Lite-On Technology

Lite-On Technology LTE-4206-like datasheet