LSG11N65E Datasheet, Mosfet, Lonten

LSG11N65E Features

• Mosfet
• Ultra low RDS(on)
• Ultra low gate charge (typ. Qg = 34nC)
• High body diode ruggedness
• Easy to use
• 100% UIS tested
• RoHS complian

PDF File Details

Part number:

LSG11N65E

Manufacturer:

Lonten

File Size:

1.29MB

Download:

📄 Datasheet

Description:

N-channel 650v power mosfet. LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, m

LSG11N65E Application

• Applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.40Ω IDM 30A Qg

TAGS

LSG11N65E

Lonten

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