Part number:
DU2840S
Manufacturer:
MA-COM
File Size:
607.39 KB
Description:
Rf power mosfet transistor.
* N-Channel enhancement mode device
* DMOS structure
* Lower capacitances for broadband operation
* High saturated output power
* Lower noise figure than bipolar devices
* RoHS Compliant Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating
DU2840S
MA-COM
607.39 KB
Rf power mosfet transistor.
📁 Related Datasheet
DU2840S - RF MOSFET Power Transistor
(Tyco Electronics)
an AMP pany
==
z
I
RF M’OSFET 2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device DMOS Structure Lower .
DU2805S - RF MOSFET Power Transistor
(Tyco Electronics)
e
an AMP pany
ec== :--=s .-= = == = -r--= =z r =
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
5W, 28V
DU2805S
v2.00
N-Channel .
DU2810 - RF MOSFET Power Transistor
(Tyco Electronics)
XF r an AMP pany
=
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structu.
DU2810S - RF MOSFET Power Transistor
(Tyco Electronics)
XF r an AMP pany
=
RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structu.
DU2810S - RF Power MOSFET Transistor
(MA-COM)
DU2810S
RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for bro.
DU28120T - RF MOSFET Power Transistor
(Tyco Electronics)
E XF
.-----r =
an AMP pany
RF MOSFET Power Transistor, 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances .
DU28120T - RF Power MOSFET Transistor
(MA-COM)
DU28120T
RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V
Features N-Channel enhancement mode device DMOS structure Lower capacitances for br.
DU28120V - RF MOSFET Power Transistor
(ETC)
RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz
Features
l l l l l
DU2812OV
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances fo.
