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MSS30-050-P55

Low Barrier Silicon Schottky Diodes

MSS30-050-P55 Features

* VF, RD and CJ Matching Options

* Chip, Beam Lead and Packaged Devices

* Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest

MSS30-050-P55 General Description

The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Mo.

MSS30-050-P55 Datasheet (666.71 KB)

Preview of MSS30-050-P55 PDF

Datasheet Details

Part number:

MSS30-050-P55

Manufacturer:

MA-COM

File Size:

666.71 KB

Description:

Low barrier silicon schottky diodes.

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MSS30-050-P55 Low Barrier Silicon Schottky Diodes MA-COM

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