MSS30-050-P86 - Low Barrier Silicon Schottky Diodes
The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Mo
