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PH2729-110M - Radar Pulsed Power Transistor

This page provides the datasheet information for the PH2729-110M, a member of the PH2729-110M-MA Radar Pulsed Power Transistor family.

Datasheet Summary

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipa.

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Datasheet preview – PH2729-110M

Datasheet Details

Part number PH2729-110M
Manufacturer MA-COM
File Size 627.62 KB
Description Radar Pulsed Power Transistor
Datasheet download datasheet PH2729-110M Datasheet
Additional preview pages of the PH2729-110M datasheet.

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Full PDF Text Transcription

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PH2729-110M Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 63 3.0 8.
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