PH2729-150M - Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty

Datasheet Summary

Description

M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers.

It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required.

Features

NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1.

Tyco Electronics

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Datasheet Details

Part number	PH2729-150M
Manufacturer	Tyco Electronics
File Size	79.51 KB
Description	Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
Datasheet	PH2729-150M Datasheet
Additional preview pages of the PH2729-150M datasheet.

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Full PDF Text Transcription

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PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1 Description M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required.

Published: Mar 22, 2005 |