Click to expand full text
*
z-z -,--= 2 .---= --= -= =c r s an AMP company
Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz
I .300
v2.00 (
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
(22.86) -:i~~~)-j
Absolute Maximum Ratings at 25°C
Parameter 1 Collector-Emitter
rr--
1 Symbol Voltage 1 V,,, V ES0 L / P,,, TJ T STG
1 1
Rating 65 3.0 8.0
1 Units
1
I v I
V
Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation
A
I
330 200 -65 to +200
I w I
“C
UNLESS CT;ERVISE NOTED, TDLERANCES A4E INCHIS :WILLIME?;RS 5.005’ :.
PH2729-65M Datasheet
