WS1A2639 Datasheet (MACOM) - GaN on SiC Power Amplifier

WS1A2639, GaN on SiC Power Amplifier

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages

WS1A2639 Features

* GaN on SiC technology

* Frequency: 2496-2690 MHz

* Average Output Power : 6 to 8 W maximum

* PSAT = 48 dBm

* RF inputs matched to 50 Ω and DC matched

* Gate bias supply for main and peak sides available from either side of device

* Integrated