WS1A2639 GaN on SiC Power Amplifier

MACOM

Description

WS1A2639 GaN on SiC Power Amplifier Module for 5G .
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a mu.

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Datasheet Specifications

Part number: WS1A2639
Manufacturer: MACOM
File Size: 331.51 KB
Datasheet: WS1A2639-MACOM.pdf
Description: GaN on SiC Power Amplifier

Features

* GaN on SiC technology
* Frequency: 2496-2690 MHz
* Average Output Power : 6 to 8 W maximum
* PSAT = 48 dBm
* RF inputs matched to 50 Ω and DC matched
* Gate bias supply for main and peak sides available from either side of device
* Integrated

Applications

* circuit for 2500
* 2700 MHz) VDD = 48 V, IDQ(main) = 25 mA, VGS(peak) =
* 5 V, channel bandwidth = 5 MHz, input PAR = 10 dB @ 0.01% CCDF POUT Gain Efficiency ACPR
* ACPR + PAR (dBM) (dB) (%) (dBc) (dBc) (dB) 2500 MHz 38.5 17.8 53.5
* 26.5
* 26.2 8

WS1A2639 Distributors

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WS1A2639 GaN SiC Power Amplifier MACOM

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