WS1A2639 - GaN on SiC Power Amplifier

MACOM

WS1A2639 Datasheet Preview — Preview of WS1A2639 PDF

Datasheet Details

Part number	WS1A2639
Manufacturer	MACOM
File Size	331.51 KB
Description	GaN on SiC Power Amplifier
Datasheet	WS1A2639-MACOM.pdf

WS1A2639 Product details

Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

Features

GaN on SiC technology.
Frequency: 2496-2690 MHz.
Average Output Power : 6 to 8 W maximum.
PSAT = 48 dBm.
RF inputs matched to 50 Ω and DC matched.
Gate bias supply for main and peak sides available from either side of device.
Integrated harmonic terminations.
Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the.

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Published: May 9, 2024 |