WS1A2639 Datasheet - MACOM

WS1A2639 GaN on SiC Power Amplifier

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages.

WS1A2639 Features

* GaN on SiC technology

* Frequency: 2496-2690 MHz

* Average Output Power : 6 to 8 W maximum

* PSAT = 48 dBm

* RF inputs matched to 50 Ω and DC matched

* Gate bias supply for main and peak sides available from either side of device

* Integrated

WS1A2639-MACOM.pdf

WS1A2639 Datasheet Preview — Preview of WS1A2639 PDF

Datasheet Details

Part number:

WS1A2639

Manufacturer:

MACOM

File Size:

331.51 KB

Description:

Gan on sic power amplifier.

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WS1A2639 WS1A2639 GaN SiC Power Amplifier MACOM

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