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WS1A2639

GaN on SiC Power Amplifier

WS1A2639 Features

* GaN on SiC technology

* Frequency: 2496-2690 MHz

* Average Output Power : 6 to 8 W maximum

* PSAT = 48 dBm

* RF inputs matched to 50 Ω and DC matched

* Gate bias supply for main and peak sides available from either side of device

* Integrated

WS1A2639 General Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages.

WS1A2639 Datasheet (331.51 KB)

Preview of WS1A2639 PDF

Datasheet Details

Part number:

WS1A2639

Manufacturer:

MACOM

File Size:

331.51 KB

Description:

Gan on sic power amplifier.

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WS1A2639 GaN SiC Power Amplifier MACOM

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