WS1A3640 GaN on SiC Power Amplifier

Wolfspeed

Description

WS1A3640 GaN on SiC Power Amplifier Module for 5G .
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing network.

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Datasheet Specifications

Part number: WS1A3640
Manufacturer: Wolfspeed
File Size: 416.24 KB
Datasheet: WS1A3640-Wolfspeed.pdf
Description: GaN on SiC Power Amplifier

Features

* GaN on SiC technology
* Frequency: 3300-3800 MHz
* Average Output Power: 39.5 dBm
* PSAT = 48 dBm
* RF inputs matched to 50 Ω and DC matched blocked
* Gate bias supply for main and peak sides available from either side of device
* Integrated

Applications

* circuit for 3400
* 3800 MHz) VDD = 48 V, IDQ(main) = 70 mA, VGS(peak) =
* 5 V, channel bandwidth = 18.015 MHz, input PAR = 10 dB @ 0.01% CCDF POUT Gain Efficiency ACPR
* ACPR + PAR (dBM) (dB) (%) (dBc) (dBc) (dB) 3400 MHz 39.5 13.5 49.6
* 25
* 26

WS1A3640 Distributors

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WS1A3640 GaN SiC Power Amplifier Wolfspeed

Wolfspeed WS1A3640-like datasheet