MSC8205G

Dual N-Channel Enhancement Mode Power MOS FET

* VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package Lead Free Application

* Battery protection

* Load switch

* Power management PIN Configuration Markin

MSC8205G

MORESEMI

590.86 KB

Dual n-channel enhancement mode power mos fet.

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