MSC82010

RF & MICROWAVE TRANSISTORS

STMicroelectronics

MSC82010 General Description

The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 w.

MSC82010 Datasheet (113.47 KB)

MSC82010 Datasheet Preview — Preview of MSC82010 PDF

Datasheet Details

Part number:

MSC82010

Manufacturer:

STMicroelectronics ↗

File Size:

113.47 KB

Description:

Rf & microwave transistors.
MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC.

📁 Related Datasheet

MSC82001 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

MSC82003 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS (STMicroelectronics)

MSC82040 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

MSC8205G Dual N-Channel Enhancement Mode Power MOS FET (MORESEMI)

MSC8205S Dual N-Channel Enhancement Mode Power MOS FET (MORESEMI)

MSC82100 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS (STMicroelectronics)

MSC82302 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

MSC82304 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

MSC82306 RF & MICROWAVE TRANSISTORS (STMicroelectronics)

TAGS

MSC82010 MICROWAVE TRANSISTORS STMicroelectronics

Image Gallery

MSC82010 General Description

Datasheet Details

File Size:

Description:

MSC82010 Distributor