MSC82040
151.47kb
Rf & microwave transistors. The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/
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📁 Related Datasheet
MSC82001 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82001
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY.
MSC82003 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82003
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRAC.
MSC82005 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
(STMicroelectronics)
MSC82005
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRAC.
MSC82010 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82010
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC.
MSC8205G - Dual N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSC8205G
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=.
MSC8205S - Dual N-Channel Enhancement Mode Power MOS FET
(MORESEMI)
MSC8205S
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4..
MSC82100 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
(STMicroelectronics)
MSC82100
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR.
MSC82302 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82302
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 2.
MSC82304 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82304
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY 2.
MSC82306 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
MSC82306
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . .
PRELIMINARY DATA
REFRACTORY\GOLD METALLIZATION VSWR CAPABILITY 2.