MSN014WE
MORESEMI
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N-channel mosfet.
📁 Related Datasheet
MSN014WE - N-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.
MSN0205 - N-Channel MOSFET
(MORESEMI)
MSN0205
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
●.
MSN0207E - N-Channel MOSFET
(MORESEMI)
MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.
MSN0212W - N-Channel MOSFET
(MORESEMI)
MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
● Hig.
MSN0260D - N-Channel MOSFET
(MORESEMI)
MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design fo.
MSN0304 - N-Channel MOSFET
(MORESEMI)
MSN0304
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
●.
MSN0306 - N-Channel MOSFET
(MORESEMI)
MSN0306
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
MSN0310W - N-Channel MOSFET
(MORESEMI)
MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
● H.
MSN0318W - N-Channel MOSFET
(MORESEMI)
MSN0318W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
● H.
MSN0325R - N-Channel MOSFET
(MORESEMI)
MSN0325R
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
● .
