MSN0207E, MORESEMI
MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.
MSN0260D, MORESEMI
MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design fo.
MSN0310W, MORESEMI
MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
● H.
