MSN014WE Datasheet, Mosfet, MORESEMI

MSN014WE Features

• Mosfet
• VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM
• High power and current handing capability
• Lead free product is acq

PDF File Details

Part number:

MSN014WE

Manufacturer:

MORESEMI

File Size:

618.84kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet.

TAGS

MSN014WE

MORESEMI

📁 Related Datasheet

MSN014WE - N-Channel MOSFET (MORESEMI)
MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD.

MSN0205 - N-Channel MOSFET (MORESEMI)
MSN0205 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ●.

MSN0207E - N-Channel MOSFET (MORESEMI)
MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V R.

MSN0212W - N-Channel MOSFET (MORESEMI)
MSN0212W 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● Hig.

MSN0260D - N-Channel MOSFET (MORESEMI)
MSN0260D 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V ● High density cell design fo.

MSN0304 - N-Channel MOSFET (MORESEMI)
MSN0304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ●.

MSN0306 - N-Channel MOSFET (MORESEMI)
MSN0306 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.

MSN0310W - N-Channel MOSFET (MORESEMI)
MSN0310W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V ● H.

MSN0318W - N-Channel MOSFET (MORESEMI)
MSN0318W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V ● H.

MSN0325R - N-Channel MOSFET (MORESEMI)
MSN0325R 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ● .