Description
This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
100 V
VGSS ID IDM EAS IAR EAR
Gate to Source Voltage
±20 V
Drain Current Drain Current
-Continuous (TC = 85oC)
Features
- RDS(on) = mΩ ( Typ. ) @ VGS = 10V, ID = 5A.
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremely low RDS(on).
- High power and current handling capability.
- RoHS compliant.